参考文献(References)：
[1] STRUKOV D B,SNIDER G S,STEWART D R,et al.The missing memristor found[J].Nature,2008,453:80.
[2] CHUA L.Memristor-the missing circuit element [J].IEEE Transactions on Circuit Theory,1971,18(5):507.
[3] SERB A,CORNA A,GEORGE R,et al.Memristive synapses connect brain and silicon spiking neurons[J].Scientific Reports,2020,10:2590.
[4] HUH W,LEE D,LEE CH,et al.Memristors based on 2D materials as an artificial synapse for neuromorphicelectronics[J].Advanced Materials,2020,32(51):e2002092.
[5] LI Y B,WANG Z R,MIDYA,R,et al.Review of memristor devices in neuromorphic computing:materials sciences and device challenges[J].Journal of Physics D:Applied Physics,2018,51(50):503002.
[6] GROLLIER J,QUERLIOZ D,CAMSARI K Y,et al.Neuromorphicspintronics[J].Nature Electronics,2020,3(7):360.
[7] GAO S,LIU G,YANG H L,et al.An oxide Schottky junction artificial optoelectronic synapse[J].ACS Nano,2019,13(2):2634.
[8] CHANTHBOUALA A,GARCIA V,CHERIFI R O,et al.A ferroelectric memristor[J].Nature Materials,2012,11(10):860.
[9] ZHAO X N,XU H Y,WANG Z Q,et al.Memristors with organic-inorganic halide perovskites[J].InfoMat,2019,1(2):183.
[10] CHEN W H,DOU C M,LI K X,et al.CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors[J].Nature Electronics,2019,2(9):420.
[11] WANG Z R,JOSHI S,SAVEL'EV S E,et al.Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing[J].Nature Materials,2017,16(1):101.
[12] IELMINI D,AMBROGIO S.Emerging neuromorphic devices[J].Nanotechnology,2020,31(9):092001.
[13] TORREZAN A C,STRACHAN J P,MEDEIROS-RIBEIRO G,et al.Sub-nanosecond switching of a tantalum oxide memristor[J].Nanotechnology,2011,22(48):485203.
[14] SOKOLOV A S,ALI M,RIAZ R,et al.Silver-adapted diffusive memristor based on organic nitrogen-doped graphene oxide quantum dots (N-GOQDs) for artificial biosynapse applications[J].Advanced Functional Materials,2019,29(18):1807504.
[15] XU R J,JANG H,LEE,M H,et al.Vertical MoS2 double-layer memristor with electrochemical metallization as an atomic-scale synapse with switching thresholds approaching 100 mV[J].Nano Letters,2019,19(4):2411.
[16] ZHANG J,YANG H,ZHANG Q L,et al.Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition[J].Applied Physics Letters,2013,102(1):012113.
[17] BEJTKA K,MILANO G,RICCIARDI C,et al.TEM nanostructural investigation of Ag-conductive filaments in polycrystalline ZnO-based resistive switching devices[J].ACS Applied Materials & Interfaces,2020,12(26):29451.
[18] HUANG Y,SHEN Z H,WU Y,et al.Amorphous ZnO based resistive random access memory[J].RSC Advances,2016,6:17867.
[19] OHNO T,HASEGAWA T,TSURUOKA T,et al.Short-term plasticity and long-term potentiation mimicked in single inorganic synapses[J].Nature Materials,2011,10(8):591.
[20] WANG W X,GAO S,LI Y,et al.Artificial optoelectronic synapses based on TiNxO2-x/MoS2 heterojunction for neuromorphic computing and visual system[J].Advanced Functional Materials,2021,31(34):2101201.
[21] TOYOIZUMI T,PFISTER J,AIHARA K,et al.Optimality model of unsupervised spike-timing-dependent plasticity:synaptic memory and weight distribution[J].Neural Computation,2007,19(3):639.
[22] ZHOU J M,LIU N,ZHU,L Q,et al.Energy-efficient artificial synapses based on flexible IGZO electric-double-layer transistors[J].IEEE Electron Device Letters,2015,36(2):198.
[23] LI H L,JIANG X T,YE W B,et al.Fully photon modulated heterostructure for neuromorphic computing[J].Nano Energy,2019,65:104000.
[24] LIN Y,ZENG T,XU,H Y,et al.Transferable and flexible artificial memristive synapse based on WOx Schottky junction on arbitrary substrates[J].Advanced Electronic Materials,2018,4(12):1800373.
[25] ZUCKER R,REGEHR G.Short-term synaptic plasticity[J].Annual Review of Physiology,2002,64:355.
[26] MIKHEEV V,CHOUPRIK A,LEBEDINSKII Y,et al.Ferro-electric second-order memristor[J].ACS Applied Materials & Interfaces,2019,11(35):32108.
[27] LIM E W,ISMAIL R.Conduction mechanism of valence change resistive switching memory:a survey[J].Electronics,2015,4(3):586.
[28] SUN Y H,YAN X Q,ZHENG X,et al.High on-off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing[J].ACS Applied Materials & Interfaces,2015,7(13):7382.
[29] WANG Z Q,XU H Y,LI X H,et al.Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor[J].Advanced Functional Materials,2012,22(13):2759.
[30] PARK S M,HWANG H G,WOO J U,et al.Improvement of conductance modulation linearity in a Cu2+-doped KNbO3 memristor through the increase of the number of oxygen vacancies[J].ACS Applied Materials & Interfaces,2020,12(1):1069.
