摘要(Abstract)：
以三甲基镓(TMGa)和氮气(N_2)分别作为镓和氮反应源,采用电子回旋共振等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术在镀铜玻璃衬底上沉积出氮化镓(GaN)薄膜,采用高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)和光致发光(PL)测试手段,表征分析TMGa流量对GaN薄膜的结晶性能、光学性能及表面形貌特性的影响。结果表明,TMGa流量对所制备的薄膜性能的影响很大, TMGa体积流量为1.4 mL/min时,GaN薄膜具有较强的c轴择优取向和良好的表面光滑度,晶粒较大且均匀,室温PL光谱显示在354 nm处有较高强度的光致发光峰,因带隙调制而产生光学带隙的蓝移。
关键词(KeyWords)： 氮化镓薄膜;等离子体增强技术;镀铜玻璃衬底
基金项目(Foundation): 国家自然科学基金项目(51872036);; 辽宁省自然科学基金项目(20180510049);; 辽宁省科技厅博士启动基金项目(20170520241);; 辽宁省“兴辽英才计划”青年拔尖人才项目(XLYC1907138);; 辽宁省教育厅重点攻关项目(JL-1901)
作者(Author): 李昱材,苏媛媛,赵琰,宋世巍,王健,王刚,唐坚,刘嘉欣,张东
DOI: 10.13349/j.cnki.jdxbn.2020.03.004
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